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Effect of Temperature on the Electrical Parameters of Indium Phosphide/ Aluminum Gallium Indium Phosphide (InP/AlGaInP) Quantum Dot Laser Diode with Different Cavity Lengths
808nm Laser Wafer with AlGaInP / GaAs Quantum Wells
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage | Journal of Materials Science: Materials in Electronics
HL65223DG AlGaInP Laser Diode (660nm | 210mW) - Get a price quote from World Star Tech
Common chip designs for AlGaInP LEDs. (a) Thin epilayers on GaAs... | Download Scientific Diagram